Jinghua Zhao is a postgraduate researcher in the School of Science at Xi’an University of Science and Technology, specializing in quantum materials and spintronics. Her research focuses on quantum spin devices and topological superconductivity, employing advanced first-principles calculations using VASP and Quantum ESPRESSO, Wannier-based tight-binding models, and model Hamiltonian approaches to explore spin filtering, strong electronic correlations, and topological phase transitions in low-dimensional systems. She has significantly contributed to understanding how external electric fields and chemical potential tuning via controlled doping can induce single-direction spin filtering and modulate superconducting phases, providing a foundation for energy-efficient spintronic and quantum devices. Her publications in high-impact journals such as Materials Today Physics and Advanced Theory and Simulations present pioneering insights into correlation-driven superconductivity, spin-dependent transport, and novel diode functionalities in quantum materials. Zhao has participated in multiple ongoing and completed research projects, demonstrating strong analytical and collaborative skills within her research group. Her work bridges theoretical discovery with device-level design principles, contributing to global advancements in low-power, high-performance quantum technologies. Through her computational expertise and focus on spin–orbit coupling, Berry curvature, and phonon stability, she aims to accelerate the realization of scalable quantum materials and spintronic architectures with societal impact in sustainable information processing. (Employment: Xi’an University of Science and Technology, Xi’an, China; Works: 2)
Profiles: ORCID
Featured Publications
Zhao, J., Yan, Z., Kong, J., Wang, Y., Xiong, K., Qi, C., & Wang, Z. (2025, December). Strong electronic correlation-driven topological superconductivity and exotic transport properties in ZrCl monolayer. Materials Today Physics.
Liang, X., Yan, Z., Kong, J., Zhao, Z., Zhao, J., Wang, Y., Qi, C., Wang, Z., & Zhao, J. (2025, July). Performing of spin‐dependent diodes in Co‐doped SiC bilayer by fully epitaxial magnetic tunnel junctions. Advanced Theory and Simulations.